1 product description eds-102434 rev b 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic ht tp://www.sirenza.com the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for i naccuracies or omissions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2007 sirenza microdevices, inc.. all worldwide rights reserved. see obsolescence notice for replacements obsolete sirenza microdevices? sna-386 is a gaas monolithic broadband amplifier (mmic) housed in a low-cost surface- mountable plastic package. at 1950 mhz. this amplifier provides 20db of gain when biased at 35ma. the use of an external resistor allows for bias flexibility and stability. these unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. also available in chip form (sna-300), its small size (0.3mm x 0.3mm) and gold metallization make it an ideal choice for use in hybrid circuits. sna-386 dc-3 ghz, cascadable gaas mmic amplifier product features ? patented gaas hbt technology ? cascadable 50 ohm gain block ? 21db gain, +23dbm toip ? operates from single supply ? low cost surface mount plastic package applications ? pa driver amplifier ? cellular, pcs, gsm, umts ? if amplifier ? wireless data, satellite output power vs. frequency 8 10 12 14 16 0.10.511.522.533.54 ghz dbm symbol parameter units frequency min. typ. max. g p small signal power gain db db db 850 mhz 1950 mhz 2400 mhz 19.0 21.0 20.0 19.5 g f gain flatness db 0.1-3 ghz +/- 1.5 bw3db 3db bandwidth ghz 3.0 p 1db output power at 1db compression dbm 1950 m hz 10.0 o ip 3 output third order intercept point dbm 1950 m hz 23.0 nf noise figure db 1950 m hz 4.0 vsw r input / o utput - 0.1-3 ghz 1.5:1 isol reverse isolation db 0.1-3 ghz 22.0 v d device operating voltage v 3.2 3.7 4.1 i d device operating current ma 30 35 40 dg/dt device gain temperature coefficient db /c -0.003 r th , j-l thermal resistance (junction to lead) c/w 330 test conditions: v s = 8 v i d = 35 ma typ. oip 3 tone spacing = 1 mhz, pout per tone = 0 dbm r bias = 120 ohms t l = 25oc z s = z l = 50 ohms
2 eds-102434 rev b preliminary 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic ht tp://www.sirenza.com sna-386 dc-3 ghz cascadable mmic amplifier obsolete |s11| vs. frequency |s21| vs. frequency |s12| vs. frequency |s22| vs. frequency toip vs. frequency -40 -30 -20 -10 0 0.1 0.5 1 1.5 2 2.5 3 -30 -25 -20 -15 -10 -5 0 0.1 0.5 1 1.5 2 2.5 3 15 17 19 21 23 0.1 0.5 1 1.5 2 2.5 3 -40 -30 -20 -10 0 0.1 0.5 1 1.5 2 2.5 3 20 22 24 26 28 30 0.10.511.522.53 ghz db ghz dbm ghz db ghz db ghz db typical performance at 25 c (vds = 3.7v, ids = 35ma) noise figure vs. frequency 3 3.5 4 4.5 5 0.1 0.5 1.0 1.5 2 2.5 3 db ghz absolute maximum ratings parameter absolute limit max. device current (i d )70 ma max. device voltage (v d )6 v max. rf input power +10 dbm max. junction temp . (t j ) + 150 c operating temp . range (t l ) -40c to +85c max. storage temp . +150c operation of this device beyond any one of these limits may cause permanent damage. for reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th , j-l
3 eds-102434 rev b preliminary 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic ht tp://www.sirenza.com sna-386 dc-3 ghz cascadable mmic amplifier obsolete part number ordering information part number reel size devices/reel sna-386-tr1 7" 1000 sna-386-tr2 13" 3000 SNA-386-TR3 13" 5000 the part will be marked with an ?s3? designator on the top surface of the package. part identification marking caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. pin # function description 1 rf in rf input pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of operation. 2, 4 gnd connect ion t o ground. for opt imum rf performance, use via holes as close to ground leads as possible to reduce lead inductance. 3 rf out/ bias rf output and bias pin. dc voltage is present on this pin, therefore a dc blocking capacitor is necessary for proper operation. 1 2 3 4 s3 typical application circuit reference designator frequency (mhz) 500 850 1950 2400 3500 c b 220 pf 100 pf 68 pf 56 pf 39 pf c d 100 pf 68 pf 22 pf 22 pf 15 pf l c 68 nh 33 nh 22 nh 18 nh 15 nh rf in rf out 1 uf c b c b c d r bias l c 1 2 3 4 1000 pf sna-386 application circuit element values recommended bias resistor values for i d =35ma r bias =( v s -v d ) / i d supply voltage(v s ) 5 v 6 v 8 v 10 v r bias 36 68 120 180 note: r bias provides dc bias stability over temperature. mounting instructions 1. use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. we recommend 1 or 2 ounce copper. measurements for this data sheet were made on a 31 mil thick fr-4 board with 1 ounce copper on both sides. 1 uf r bias s3 1000 pf c b c b c d l c v s
4 eds-102434 rev b preliminary 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic ht tp://www.sirenza.com sna-386 dc-3 ghz cascadable mmic amplifier obsolete pcb pad layout dimensions in inches [millimeters] nominal package dimensions dimensions in inches [millimeters] refer to drawing posted at www.sirenza.com for tolerances.
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